maximum ratings: (t c =25c) symbol 2N4296 2n4298 2n4299 units collector-base voltage v cbo 350 500 350 v collector-emitter voltage v ceo 250 350 250 v emitter-base voltage v ebo 4.0 v continuous collector current i c 1.0 a continuous base current i b 250 ma power dissipation p d 20 w operating and storage junction temperature t j , t stg -65 to +175 c thermal resistance ? jc 7.5 c/w electrical characteristics: (t c =25c unless otherwise noted) 2N4296 2n4298 2n4299 symbol test conditions min max min max min max units i cev v ce =150v, v be =1.5v, t c =135c - 600 - 600 - 600 a i cbo v cb =350v - 100 - - - 100 a i cbo v cb =500v - - - 100 - - a i ebo v be =4.0v - 100 - 100 - 100 a bv ceo i c =50ma 200 - 350 - 250 - v v ce(sat) i c =50ma, i b =5.0ma - 0.9 - 0.9 - 0.75 v v be(sat) i c =50ma, i b =5.0ma - 1.5 - 1.5 - 1.5 v v be(on) v ce =10v, i c =100ma - 0.9 - 0.9 - 0.9 v h fe v ce =10v, i c =5.0ma 35 - 20 - 35 - h fe v ce =10v, i c =50ma 50 150 25 75 50 150 h fe v ce =10v, i c =100ma 35 - 20 - 35 - f t v ce =10v, i c =20ma, f=5.0mhz 20 - 20 - 20 - mhz c cb v cb =100v, i c =0, f=0.1 to 1.0mhz - 6.0 - 6.0 - 6.0 pf t on v cc =100v, i c =100ma, i b1 =i b2 =10ma - 7.0 - 7.0 - 7.0 s t off v cc =200v, i c =100ma, i b1 =i b2 =10ma - 10 - 10 - 10 s i s/b v ce =200v 75 - 75 - 75 - ma 2N4296 2n4298 2n4299 silicon npn power transistors description: the central semiconductor 2N4296, 2n4298, and 2n4299 devices are silicon npn power transistors designed for power amplifier and switching applications. marking: full part number to-66 case r1 (2-september 2014) www.centralsemi.com
2N4296 2n4298 2n4299 silicon npn power transistors to-66 case - mechanical outline marking: full part number www.centralsemi.com r1 (2-september 2014)
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